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| 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 MRF904 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features * * * Silicon NPN, high Frequency, To-72 packaged, Transistor High Power Gain - GU(max): 11 dB (typ) @ f = 450 MHz 7 dB (typ) @ f = 1 GHz Low Noise Figure NF = 1.5 dB (typ) @ f = 450 MHz 2 * High FT - 4 GHz (typ) @ IC = 15 mAdc 1 4 3 1. Emitter 2. Base 3. Collector 4. Case TO-72 DESCRIPTION: Designed primarily for use in High Gain, low noise general-purpose amplifiers. ABSOLUTE MAXIMUM RATINGS (Tcase = 25C) Symbol VCEO VCBO VEBO IC Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Value 15 25 3.0 30 Unit Vdc Vdc Vdc mA Thermal Data PD TJMAX TSTORAGE Total Device Dissipation @ TA = 25 C Derate above 25 C Junction Temperature Storage Temperature 200 1.14 200 -65 to +200 mWatts mW/ C C C Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. MRF904 ELECTRICAL SPECIFICATIONS (Tcase = 25C) STATIC (off) Symbol BVCEO BVCBO BVEBO ICBO Test Conditions Collector-Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) Collector-Base Breakdown Voltage (IC= .1 mAdc, IE=0) Emitter-Base Breakdown Voltage (IE = 0.1 mAdc, IC = 0) Collector Cutoff Current (VCE = 15 Vdc, IE = 0 Vdc) Value Min. 15 25 3.0 Typ. Max. 50 Unit Vdc Vdc Vdc nA (on) HFE DC Current Gain (IC = 5.0 mAdc, VCE = 5 Vdc) 30 200 - DYNAMIC Symbol fT Test Conditions Current-Gain - Bandwidth Product (IC = 15 mAdc, VCE = 10 Vdc, f = 1 GHz) Junction Capacitance (VCB = 10Vdc, IE=0, f=1 MHz) Noise Figure (IC = 5.0 mAdc, VCE = 6.0 Vdc, f = 450 MHz) Value Min. Typ. 4.0 1.5 Max. 1.5 Unit GHz pF dB CCB NF Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. MRF904 Functional Symbol GU max Test Conditions Maximum Unilateral Gain (1) (IC = 5.0 mAdc, VCE = 6.0 Vdc, f = 500 MHz) (IC = 5.0 mAdc, VCE = 6.0 Vdc, f = 1 GHz) Maximum Available Gain (1) (IC = 5.0 mAdc, VCE = 6.0 Vdc, f = 500 MHz) (IC = 5.0 mAdc, VCE = 6.0 Vdc, f = 1 GHz) Maximum Available Gain (1) (IC = 5.0 mAdc, VCE = 6.0 Vdc, f = 500 MHz) (IC = 5.0 mAdc, VCE = 6.0 Vdc, f = 1 GHz) Value Min. 9.5 Typ. 11 7 10.5 6.5 11 7 Max. Unit dB S |21| 2 dB MAG dB (1) Maximum Unilateral Gain = |S21|2 / (1 - |S11|2) (1 - |S22|2) Table 1. Common Emitter S-Parameters, @ VCE = 5 V, IC = 6 mA f S11 S21 S12 S22 (MHz) 100 200 300 400 500 600 700 800 900 1000 |S11| .66 .41 .31 .26 .20 .18 .16 .16 .15 .15 -37 -52 -54 -59 -61 -59 -60 -66 -74 -76 |S21| 10.5 7.03 5.33 4.00 3.38 3.00 2.69 2.30 2.16 2.16 131 111 98 90 87 81 75 70 71 63 |S12| .040 .065 .093 .111 .136 .162 .186 .200 .215 .243 71 71 70 69 71 68 66 63 65 62 |S22| .781 .597 .551 .517 .467 .455 .438 .437 .409 .413 -23 -27 -26 -30 -30 -32 -36 -42 -47 -48 Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. MRF904 Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. |
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